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S29GL512P12TFIV20 3.0 Volt-Only Page Mode Flash Memory 90 nm process technology

Shenzhen Huahao Gaosheng Technology Co., Ltd
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    Buy cheap S29GL512P12TFIV20 3.0 Volt-Only Page Mode Flash Memory 90 nm process technology from wholesalers
     
    Buy cheap S29GL512P12TFIV20 3.0 Volt-Only Page Mode Flash Memory 90 nm process technology from wholesalers
    • Buy cheap S29GL512P12TFIV20 3.0 Volt-Only Page Mode Flash Memory 90 nm process technology from wholesalers
    • Buy cheap S29GL512P12TFIV20 3.0 Volt-Only Page Mode Flash Memory 90 nm process technology from wholesalers

    S29GL512P12TFIV20 3.0 Volt-Only Page Mode Flash Memory 90 nm process technology

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    Brand Name : SPANSION
    Model Number : S29GL512P12TFIV20
    Certification : ROHS COMPLIANT
    Price : negotiate
    Payment Terms : T/T in advance, Western Union, Xtransfer
    Supply Ability : 500
    Delivery Time : Within 3days
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    S29GL512P12TFIV20 3.0 Volt-Only Page Mode Flash Memory 90 nm process technology

    S29GL512P12TFIV20 - SPANSION - 1 GIGABIT, 512 MEGABIT, 256 MEGABIT AND 128 MEGABIT 3.0 VOLT-ONLY PAGE MODE FLASH MEMORY

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    nand flash memory chips

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    cmos flash memory


    Quick Detail:


    1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology


    Description:


    The Spansion S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These devices offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.


    Applications:


    Single 3V read/program/erase (2.7-3.6 V)

    Enhanced VersatileI/O™ control

    – All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC

    90 nm MirrorBit process technology

    8-word/16-byte page read buffer

    32-word/64-byte write buffer reduces overall programming time for multiple-word updates

    Secured Silicon Sector region

    – 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number

    – Can be programmed and locked at the factory or by the customer

    Uniform 64 Kword/128 Kbyte Sector Architecture

    – S29GL01GP: One thousand twenty-four sectors

    – S29GL512P: Five hundred twelve sectors

    – S29GL256P: Two hundred fifty-six sectors

    – S29GL128P: One hundred twenty-eight sectors

    100,000 erase cycles per sector typical

    20-year data retention typical

    Offered Packages

    – 56-pin TSOP

    – 64-ball Fortified BGA

    Suspend and Resume commands for Program and Erase operations

    Write operation status bits indicate program and erase operation completion

    Unlock Bypass Program command to reduce programming time

    Support for CFI (Common Flash Interface)

    Persistent and Password methods of Advanced Sector Protection

    WP#/ACC input

    – Accelerates programming time (when VHH is applied) for greater throughput during system production

    – Protects first or last sector regardless of sector protection settings

    Hardware reset input (RESET#) resets device

    Ready/Busy# output (RY/BY#) detects program or erase cycle completion


    Specifications:


    part no.S29GL512P12TFIV20
    ManufacturerSPANSION
    supply ability10000
    datecode10+
    packageTSOP
    remark

    new and original stock


    Quality S29GL512P12TFIV20 3.0 Volt-Only Page Mode Flash Memory 90 nm process technology for sale
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